High School

How long does it take to grow 100 nm of oxide in wet oxygen at 1000°C (assuming 100% silicon)? In dry oxygen? Which process would be preferred?

A) Wet: 100 minutes, Dry: 80 minutes, Wet process preferred
B) Wet: 80 minutes, Dry: 100 minutes, Dry process preferred
C) Wet: 100 minutes, Dry: 100 minutes, Either process is equally preferred
D) Wet: 80 minutes, Dry: 80 minutes, No preference between processes

Answer :

Final answer:

The dry process takes less time than the wet process for growing 100nm of oxide at 1000°C.

Explanation:

The growth of oxide on silicon is a key process in semiconductor technology. The rate of oxide growth depends on several factors, including temperature, oxygen concentration, and the presence of moisture. In wet oxygen, the oxide growth rate is typically higher compared to dry oxygen due to the presence of water vapor.

At 1000°C, the wet oxidation process takes longer than the dry oxidation process to grow the same thickness of oxide. Therefore, option A) Wet: 100 minutes and Dry: 80 minutes is incorrect. The correct answer is option B) Wet: 80 minutes and Dry: 100 minutes, indicating that the dry process is preferred for growing 100nm of oxide at 1000°C.

Other Questions